This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Low gate charge typical 45 nC? Low Crss typical 45 pF? Fast switching? C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2.
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Connect with us. Electronics Forums. Search Forums Recent Posts. Scroll to continue with content. Feb 11, 1. I only have available IRFN units. Can I make the replacement safely? Thanks Jorge. Feb 11, 2. Hi Jorge and welcome to Electronics Point What brand are the existing devices? Is there a manufacturer's logo? Feb 11, 3. Hi Kris Nice to participate in the forum. Both Mosfets are International Rectifier. Thanks, Jorge. Feb 11, 4. Yes, I think you're probably right. Feb 11, 5.
They are from different manufacturers. I have attached them. Thank you,. Feb 11, 6. I've asked Steve for his advice. Feb 12, 7. My initial thoughts are that it is an entirely suitable replacement but its hard to compare them on a mobile device.
I will do some more thorough investigations later in the day. Feb 13, 8. As long as the device is not required to operate in avalanche mode at energies near the single pule limit I would have no hesitation in swapping the IRF for an IRFN.
KrisBlueNZ likes this. Feb 13, 9. Thanks Steve. You must log in or sign up to reply here. Show Ignored Content. Ask a Question Want to reply to this thread or ask your own question?
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200V N-Channel MOSFET
November General Description. These N-Channel enhancement mode power field effect. This advanced technology has been especially tailored to. These devices are well. IRF Series. IRFS Series.
IRF640PBF = IRF640A = UF640
IRF640 MOSFET. Datasheet pdf. Equivalent